| 474 | 0 | 60 |
| 下载次数 | 被引频次 | 阅读次数 |
焊接型IGBT作为高海拔地区光伏发电系统的关键部件，其可靠性直接决定光伏电站的稳定运行。然而缺少相应的高海拔地区的电-热-力耦合模型，同时有关高海拔地区由于芯片温升以及键合线所受应力过大造成的模块性能失效的研究也少之又少。为此根据IGBT模块内部电场、热场和力场之间的耦合作用关系，以焊接型IGBT为研究对象，建立铜、铝键合线的焊接型IGBT电-热-力耦合有限元模型，分别分析了不同海拔高度以及4 200 m特定海拔高度下每月的极端环境温度对铜、铝两种键合线种类的焊接型IGBT的最大结温与键合线最大应力的影响。研究表明，随着海拔升高，最大结温与键合线最大应力呈上升趋势；使用铜键合线的IGBT模块的最大结温低于使用铝键合线的IGBT模块的最大结温，但使用铜键合线的IGBT模块的最大应力值更高。该研究为高海拔地区优化键合线材料，提高IGBT模块运行稳定性提供了理论指导。
Abstract：As a key component of photovoltaic power generation systems in high-altitude areas, the reliability of welding IGBT directly determines the stable operation of photovoltaic power plants. However, there is a lack of corresponding electrical-thermal-mechanical coupling models in high-altitude areas, and little research exists on module performance failures caused by chip temperature rise and excessive stress on bonding wires in high altitude areas. Based on the coupling relationship between the internal electric field, thermal field, and mechanical field of the welding IGBT, a finite element model of the welding IGBT for copper and aluminum bonding wires is established. The model analyzes the effects of extreme environmental temperatures at different altitudes and specific altitudes of 4 200 m per month on the maximum junction temperature and maximum stress of the welding IGBT for both copper and aluminum bonding wires. Research shows that as altitude increases, the maximum junction temperature and maximum stress of the bonding wires exhibit an upward trend. The maximum junction temperature of IGBT using copper bonding wires is lower than that of those using aluminum bonding wires, but the maximum stress value of welding IGBT using copper bonding wires is higher. This study provides theoretical guidance for optimizing bonding wire materials and improving the operational stability of welding IGBT in high altitude areas.
[1] 谭显东，刘俊，徐志成，等.“双碳”目标下“十四五”电力供需形势[J].中国电力，2021,54(5):1-6.TAN Xiandong,LIU Jun,XU Zhicheng,et al.The supply-demand situation of electricity during the 14th five year plan under the "dual carbon" goal[J].China Electric Power,2021,54 (5):1-6 (in Chinese).
[2] 李文艺，王亚林，尹毅.高压功率模块封装绝缘的可靠性研究综述[J].中国电机工程学报，2022,42(14):5312-5326.LI Wenyi,WANG Yalin,YIN Yi.Summary of reliability research on high voltage power module packaging insulation[J].Chinese Journal of Electrical Engineering,2022,42 (14):5312-5326 (in Chinese).
[3] LI Qi,LI Yangbo,FU Haodong,et al.Review of the failure mechanism and methodologies of IGBT bonding wire[J].IEEE Transactions on Components,Packaging and Manufacturing Technology,2023,7(3):1045-1057.
[4] 张心印.绝缘栅双极型晶体管(IGBT)模块的封装可靠性增强方法研究[D].天津：天津大学，2020.ZHANG Xinyin.Research on packaging reliability enhancement methods for insulated gate bipolar transistor modules[D].Tianjin:Tianjin University,2020 (in Chinese).
[5] HUANG Yongle,JIA Yingjie,LUO Yifei,et al.Lifting-off of Al bonding wires in IGBT modules under power cycling:failure mechanism and lifetime model[J].IEEE Journal of Emerging and Selected Topics in Power Electronics,2020,8(3):3162-3173.
[6] THATREE M,ZAIQI L,KATSUHIRO H,et al.Enhancement of turn-off gate voltage waveform change by digital gate control for bond wire lift-off detection in IGBT module[J].Microelectronics Reliability,2023,147:1-6.
[7] KANG Y,DANG L,YANG L,et al.Research progress in failure mechanism and health state evaluation index system of welded IGBT power modules[J].Electronics,2023,12(15):10-12.
[8] KAIHONG W,LUOWEI Z,PENGJU S,et al.Monitoring bond wires defects of IGBT module using module transconductance[J].IEEE Journal of Emerging and Selected Topics in Power Electronics,2021,9(2):2201-2211.
[9] DAN L,MINYOU C,WEI L,et al.A study on the effect of bond wires lift-off on IGBT thermal resistance measurement[J].Electronics,2021,10(2):21-22.
[10] TENG Yiran,WANG Liancheng.Comparison between the influence of mechanical vibration and junction temperature rise originated bond wires detachment on the characteristics of IGBT module[J].Journal of Physics:Conference Series,2021,1774(1):39-41.
[11] JING G,ZHIRUI L,YI L,et al.Analysis of the IGBT module with bonding wire failure based on transient thermal impedance[J].Journal of Physics:Conference Series,2022,2276(1):15-16.
[12] XINGYU D,XIN Y,XINLONG W,et al.Analytical modeling of thermo-mechanical stress for bond wire of IGBT module[J].Microelectronics Reliability,2021,127(5):23-24.
[13] TU Chunming,XU Haoliang,XIAO Biao,et al.Study on the failure of IGBT bonding wire based on temperature gradient[C].IECON 2020 The 46th Annual Conference of the IEEE Industrial Electronics Society,Singapore,2020.
[14] 周文栋.IGBT模块电—热—力耦合与失效分析[D].广州：华南理工大学，2016.ZHOU Wendong.Electrical-thermal-mechanical coupling and failure analysis of IGBT modules[D].Guangzhou:South China University of Technology,2016 (in Chinese).
[15] 贺斌.基于Comsol多物理场耦合仿真的IGBT的失效机理分析[D].哈尔滨：哈尔滨理工大学，2021.HE Bin.Failure mechanism analysis of IGBT based on Comsol multi-physics coupling simulation[D].Harbin:Harbin University of Science and Technology,2021 (in Chinese).
[16] 唐勇，陈明，汪波.电力电子器件短时脉冲工作的结温特性研究[J].电力电子技术，2010,44(3):88-90.TANG Yong,CHEN Ming,WANG Bo.Research on junction temperature characteristic of power electronics devices under short pulse operation[J].Power Electronics,2010,44(3):88-90 (in Chinese).
[17] 汪波，胡安，唐勇.基于电热模型的IGBT结温预测与失效分析[J].电机与控制学报，2012,16(8):87-93.WANG Bo,HU An,TANG Yong.Prediction and failure analysis of IGBT junction temperature based on electrothermal model[J].Journal of Electric Machines and Control,2012,16(8):87-93 (in Chinese).
[18] 唐勇，汪波，陈明.IGBT开关瞬态的温度特性与电热仿真模型[J].电工技术学报，2012,27(12):146-153.TANG Yong,WANG Bo,CHEN Ming.Transient temperature characteristics and electrothermal simulation model of IGBT switch[J].Transactions of China Electrotechnical Society,2012,27(12):146-153 (in Chinese).
[19] WANG Quandi,ZHANG Huaiqing.Electromagnetic field [M].Beijing:Science Press,2013.
[20] YANG Shiming,TAO Wenquan.Heat transfer[M].Beijing:Higher Education Press,2006.
[21] JUAN C,LOPR Z,PEDRO C.Influence of different types of magnetic shields on the thermal behavior and ampacity of underground power cables[J].IEEE Transactions on Industrial Electronics,2011,26(4):2659-2667 (in Chinese).
[22] HOAD R,CARTER N J,HERKE D,et al.Trends in EM susceptibility of IT equipment [J].IEEE Transactions Electromagnetic Compatibility,2004,46(3):390-395.
[23] YOUNES S.Heat transfer:Thermal management of power electronic devices[M].Beijing:China Machine Press,2013.
[24] 王生杰，包正红，林万德，等.高海拔条件下换流变压器阀侧套管温升仿真研究[J].变压器，2021,58(2):47-51.WANG Shengjie,BAO Zhenghong,LIN Wande,et al.Simulation study on temperature rise of valve-side bushing of converter transformer under high altitude conditions[J].Transformer,2021,58(2):47-51 (in Chinese).
[25] ZHOU Yanan.IGBT electro-thermal multi-physical field simulation and thermal stress analysis based on finite element method[D].Changsha:Hunan University,2021.
[26] XUE Niding,MIN Uanchen,WEI Laidan,et al.Selection of aging characteristics of multi-chip parallel IGBT modules[J].Journal of Electrical Engineering Technology,2022,37(13):3304-3316+3340.
[27] ZHOU W D.Electrical-thermal-force coupling and failure analysis of IGBT modules[D].Guangzhou:South China University of Technology,2016.
基本信息:
中图分类号:TN322.8
引用信息:
[1]律方成,王炳强,平措顿珠,等.考虑高海拔环境及键合线种类的焊接型IGBT电-热-力模型[J].华北电力大学学报(自然科学版),2026,53(01):95-105.
基金信息:
国家电网有限公司科技项目(5500-202237345A-2-0-SY)
2023-11-24
2023-11-24
2023-11-24